leshan radio company, ltd. lmbt3906lt1g sot? 23 (to?236ab) maximum ratings rating symbol v alue unit collector?emitter voltage v ceo ? 40 vdc collector?base voltage v cbo ? 40 vdc emitter?base voltage v ebo ? 5.0 vdc collector current ? continuous i c ? 200 madc thermal characteristics characteristic symbol max unit total device dissipation fr? 5 board(1) p d 225 mw t a =25 c derate above 25c 1.8 mw/c ja 556 c/w total device dissipation p d 300 mw alumina substrate, (2) t a = 25c derate above 25c 2.4 mw/c thermal resistance junction to ambient r ja 417 c/w junction and storage temperature t j , t stg ?55 to +150 c device marking lmbt3906lt1g = 2a electrical characteristics (t a = 2 5 c unless otherwise noted) characteristic symbol min max unit off characteristics collector?emitter breakdown voltage (3) v (br)ceo vdc (i c = ?1.0 madc, i b = 0) ? 40 ? collector?base breakdown voltage v (br)cbo vdc (i c = ?10 adc, i e = 0) ? 40 ? emitter?base breakdown voltage v (br)ebo vdc (i e = ?10 adc, i c = 0) ? 5.0 ? base cutoff current i bl nadc (v ce = ?30 vdc, v eb = ?3.0 vdc) ? ? 50 collector cutoff current i cex nadc (v ce = ?30 vdc, v eb = ?3.0 vdc) ? ? 50 1. fr?5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. general purpose transistors pnp silicon 2 emitter 3 collector 1 base 3. pulse width < 300 s; duty cycle < 2.0%. ? device marking shipping lmbt3906lt1g 2a 3000/tape & reel lmbt3906lt3g 2a 10000/tape & reel ordering information compliance with rohs requirements. we declare that the material of product thermal resistance, junction to ambient r 1 2 3 rev.o 1/7 s-lmbt3906lt1g ? and control change requirements; aec-q101 qualified and ppap capable. s- prefix for automotive and other applications requiring unique site s-lmbt3906lt1g 2a s-lmbt3906lt3g 2a
leshan radio company, ltd. lmbt3906lt1g electrical characteristics (t a = 25c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics (2) dc current gain h fe ?? (i c = ?0.1 madc, v ce = ?1.0 vdc) 60 ?? (i c = ?1.0 madc, v ce = ?1.0 vdc) 80 ?? (i c = ?10 madc, v ce = ?1.0 vdc) 100 300 (i c = ?50 madc, v ce = ?1.0 vdc) 60 ?? (i c = ?100 madc, v ce = ?1.0 vdc) 30 ?? collector?emitter saturation voltage v ce(sat) vdc (i c = ?10 madc, i b = ?1.0 madc) ?? ? 0.25 (i c = ?50 madc, i b = ?5.0 madc) ?? ? 0.4 base?emitter saturation voltage v be(sat) vdc (i c = ?10 madc, i b = ?1.0 madc) ? 0.65 ? 0.85 (i c = ?50 madc, i b = ?5.0 madc) ?? ? 0.95 small?signal characteristics current?gain ? bandwidth product f t mhz (i c = ?10 madc, v ce = ?20 vdc, f = 100 mhz) 250 ?? output capacitance c obo pf (v cb = ?5.0 vdc, i e = 0, f = 1.0 mhz) ?? 4.5 input capacitance c ibo pf (v eb = ?0.5 vdc, i c = 0, f = 1.0 mhz) ?? 1 0 input impedance h ie k (v ce = ?10 vdc, i c = ?1.0 madc, f = 1.0 khz) 2.0 12 voltage feedback ratio h re x 10 ?4 (v ce = ?10 vdc, i c = ?1.0 madc, f = 1.0 khz) 0.1 10 small?signal current gain h fe ? (v ce = ?10 vdc, i c = ?1.0 madc, f = 1.0 khz) 100 400 output admittance * h oe mhos (v ce = ?10 vdc, i c = ?1.0 madc, f = 1.0 khz) 3.0 60 noise figure nf db (v ce = ?5.0vdc, i c = ?100 adc, r s =1.0 k , f =1.0khz) ?? 4.0 switching characteristics delay time (v cc = ? 3.0 vdc, v be = 0.5 vdc, t d ?35 rise time i c = ?10 madc, i b1 = ?1.0 madc) t d ?35ns storage time (v cc = ?3.0 vdc, i c = ?10 madc, t s ? 225 ns fall time i b1 = i b2 = ?1.0 madc) t f ?75 3. pulse test: pulse width < 300 s; duty cycle < 2.0%. rev.o 2/7 ;s-lmbt3906lt1g
leshan radio company, ltd. figure 1. delay and rise time equivalent test circuit figure 2. storage and fall time equivalent test circuit 3 v 275 10 k 1n916 c s < 4 pf* 3 v 275 10 k c s < 4 pf* < 1 ns +0.5 v 10.6 v 300 ns duty cycle = 2% < 1 ns +9.1 v 10.9 v duty cycle = 2% t 1 0 10 < t 1 < 500 s * total shunt capacitance of test jig and connectors typical transient characteristics figure 3. capacitance reverse bias (volts) 2.0 3.0 5.0 7.0 10 1.0 0.1 figure 4. charge data i c , collector current (ma) 5000 1.0 v cc = 40 v i c /i b = 10 q, charge (pc) 3000 2000 1000 500 300 200 700 100 50 70 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 capacitance (pf) 1.0 2.0 3.0 5.0 7.0 10 20 30 40 0.2 0.3 0.5 0.7 q t q a c ibo c obo t j = 25 c t j = 125 c figure 5. turn ? on time i c , collector current (ma) 70 100 200 300 500 50 time (ns) 1.0 2.0 3.0 10 20 70 5 100 figure 6. fall time i c , collector current (ma) 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 t , fall time (ns) f v cc = 40 v i b1 = i b2 i c /i b = 20 i c /i b = 10 i c /i b = 10 t r @ v cc = 3.0 v t d @ v ob = 0 v 40 v 15 v 2.0 v rev.o 3/7 lmbt3906lt1g ;s-lmbt3906lt1g
leshan radio company, ltd. typical audio small ? signal characteristics noise figure variations (v ce = ? 5.0 vdc, t a = 25 c, bandwidth = 1.0 hz) figure 7. f, frequency (khz) 2.0 3.0 4.0 5.0 1.0 0.1 figure 8. r g , source resistance (k ohms) 0 nf, noise figure (db) 1.0 2.0 4.0 10 20 40 0.2 0.4 0 100 4 6 8 10 12 2 0.1 1.0 2.0 4.0 10 20 40 0.2 0.4 100 nf, noise figure (db) f = 1.0 khz i c = 1.0 ma i c = 0.5 ma i c = 50 a i c = 100 a source resistance = 200 i c = 1.0 ma source resistance = 200 i c = 0.5 ma source resistance = 2.0 k i c = 100 a source resistance = 2.0 k i c = 50 a h parameters (v ce = ? 10 vdc, f = 1.0 khz, t a = 25 c) figure 9. current gain i c , collector current (ma) 70 100 200 300 50 figure 10. output admittance i c , collector current (ma) h , dc current gain h , output admittance ( mhos) figure 11. input impedance i c , collector current (ma) figure 12. voltage feedback ratio i c , collector current (ma) 30 100 50 10 20 2.0 3.0 5.0 7.0 10 1.0 0.1 0.2 1.0 2.0 5.0 0.5 10 0.3 0.5 3.0 0.7 2.0 5.0 10 20 1.0 0.2 0.5 oe h , voltage feedback ratio (x 10 ) re h , input impedance (k ohms) ie 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 7 5 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 fe -4 70 30 0.7 7.0 0.7 7.0 7.0 3.0 0.7 0.3 0.7 7.0 0.7 7.0 rev.o 4/7 lmbt3906lt1g ;s-lmbt3906lt1g
leshan radio company, ltd. typical static characteristics figure 13. dc current gain i c , collector current (ma) 100 1000 10 1.0 t j = 150 c 25 c -55 c h fe , dc current gain 10 100 1000 v ce = 1 v figure 14. collector saturation region i b , base current (ma) 0.4 0.6 0.8 1.0 0.2 0.1 v , collector emitter voltage (volts) 0.5 2.0 3.0 10 0.2 0.3 0 1.0 0.7 5.0 7.0 ce i c = 1.0 ma t j = 25 c 0.07 0.05 0.03 0.02 0.01 10 ma 30 ma 100 ma rev.o 5/7 lmbt3906lt1g ;s-lmbt3906lt1g
leshan radio company, ltd. figure 15. collector emitter saturation voltage vs. collector current figure 16. base emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 1 0.1 0.01 0.001 0 0.05 0.10 0.15 0.25 0.35 0.40 0.50 1 0.1 0.01 0.001 0.0001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 figure 17. base emitter voltage vs. collector current i c , collector current (a) 1 0.1 0.01 0.001 0.0001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v ce(sat) , collector ? emitter saturation voltage (v) v be(sat) , base ? emitter saturation voltage (v) v be(on) , base ? emitter voltage (v) 0.30 i c /i b = 10 150 c 25 c ? 55 c i c /i b = 10 150 c 25 c ? 55 c v ce = 1 v 150 c 25 c ? 55 c 0.20 0.45 figure 18. current gain bandwidth vs. collector current i c , collector current (ma) 1000 100 10 1 0.1 10 100 1000 f t , current ? gain ? bandwidth product (mhz) v ce = 2 v t a = 25 c v ce (vdc) 100 10 1 0.1 0.01 0.001 0.01 0.1 1 ic (a) single pulse test @ t a = 25 c thermal limit 100 ms 1 s 10 ms 1 ms i c , collector current (ma) -0.5 0 0.5 1.0 0 60 80 120 140 160 180 20 40 100 200 -1.0 -1.5 -2.0 +25 c to +125 c -55 c to +25 c +25 c to +125 c -55 c to +25 c vc for v ce(sat) vb for v be(sat) , temperature coefficients (mv/ c) v figure 19. temperature coefficients figure 20. safe operating area rev.o 6/7 lmbt3906lt1g ;s-lmbt3906lt1g
leshan radio company, ltd. d j k l a c b s h g v 12 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. inches millimeters dim min max min max a 0.1102 0.1197 2.80 3.04 b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0.0177 0.0236 0.45 0.60 0.031 0.8 sot-23 3 rev.o 7/7 lmbt3906lt1g ;s-lmbt3906lt1g
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